|Table of Contents|

Back-Cathode Triode Structure for CNT and Its Simulations(PDF)

《南京师大学报(自然科学版)》[ISSN:1001-4616/CN:32-1239/N]

Issue:
2013年01期
Page:
54-58
Research Field:
物理学
Publishing date:

Info

Title:
Back-Cathode Triode Structure for CNT and Its Simulations
Author(s):
Lu Xu1Di Yunsong2
(1.Jiangsu Union Technical Institute,College of Zhenjiang,Zhenjiang 212016,China) (2.Nanjing Normal University,School of Physics and Technology,Nanjing 210023,China)
Keywords:
carbon nanotubefield emission devicetriodemodulation characteristic
PACS:
O462.4
DOI:
-
Abstract:
A new field emission triode structure with carbon nanotube(CNT)cathode called back-cathode is proposed.In this triode structure,a glass substrate with an array of holes is used as the cathode plate.The carbon nanotube emitters are printed around the holes on the cathode electrode.The gate electrodes are fabricated on another substrate which is mounted below the cathode substrate.Because a high anode voltage is applied,the electric field produced by the anode voltage can penetrate into the CNT cathode area.A negative voltage is applied on the gate electrode to control the emission current from the CNT cathode.The electrical field distribution and electron trajectories have been simulated,and the modulation feasibility and working modes of the structure have been discussed.

References:

[1] Wang Q,Setlur A,Lauerhaas J,et al.A nanotube-based field-emission flat panel display[J].Applied Physics Letters,1998,72(22):2 912-2 913.
[2]Fan S,Michael G,Nathan R,et al.Self-oriented regular arrays of carbon nanotubes and their field emission properties[J].Science,1999,283(5401):512-514.
[3]Lei W,Zhang X,Chen J,et al.Very high field emission from a carbon nanotube array with isolated subregions and balanced resistances[J].IEEE Transaction on Electron Devices,2011,58(10):3 616-3 621.
[4]Wang Q,Yan M,Chang R.Flat panel display prototype using gated carbon nanotube field emitters[J].Applied Physics Letters,2001,78(9):1 294-1 296.
[5]Choi Y,Kang J,Park Y,et al.An under-gate triode structure field emission display with carbon nanotube emitters[J].Diamond and Related Materials,2001,10(9):1 705-1 708.
[6]Visser H,Rosink J,Gillies M,et al.Field emission display architecture based on hopping electron transport[C].SID Symposium Digest,2003,34:806-809.
[7]Jung J,Choi J,Park Y,et al.Development of triode-type carbon nanotube field-emitter arrays with suppression of diode emission by forming electroplated Ni wall structure[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,2003,21(1):375-381.
[8]Zhong X,Wilbert P,Engelsen D,et al.Monte Carlo calculation of electron transport through hop and flu spacers in HOPFED[J].J Soc Inf Display,2004,12:203-206.
[9]Zhao H,Lei W,Zhang X,et al.Simulation of the cathode surface damages in a HOPFED during ion bombardment[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,2005,23(6):3 148-3 152.
[10]Garner D,Amaratunga G.Analytic modelling of the thin-film field-emission triode[J].Solid-State Electronics,2001,45(6):879-886.
[11]Lee C,Cheng H.Planar triode structure carbon nanotubes field emission display[C].SID Symposium Digest,2003,34:922-925.
[12]Nilsson L,Groening O,Emmenegger C,et al.Scanning field emission from patterned carbon nanotube films[J].Applied Physics Letters,2000,76(15):2 071-2 073.
[13]Li J,Lei W,Zhang X,et al.Field emission characteristic of screen-printed carbon nanotube cathode[J].Applied Surface Science,2003,220(1):96-104.
[14]Wei L,Zhang X.Study of the triode structure in a field emission display element[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,2006,24(2):962-966.
[15]Jang Y,Choi C,Ju B,et al.Suppression of leakage current via formation of a sidewall protector in the microgated carbon nanotube emitter[J].Nanotechnology,2003,14:497-500.

Memo

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Last Update: 2013-03-31