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Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped AlxGa1-xAs/GaAs Double Quantum Well(PDF)

《南京师大学报(自然科学版)》[ISSN:1001-4616/CN:32-1239/N]

Issue:
2015年02期
Page:
23-
Research Field:
物理学
Publishing date:

Info

Title:
Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped AlxGa1-xAs/GaAs Double Quantum Well
Author(s):
Yang ShuangboZhao Hengfei
Jiangsu Key Laboratory for NSLSCS,School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China
Keywords:
AlxGa1-xAs/GaAs double quantum welldoping concentrationintersubband optical absorption coefficient
PACS:
O413.1
DOI:
-
Abstract:
By solving Schrödinger equation and Poisson equation self-consistently under the effective mass approximation,we calculated the structure of the electronic state of δ-doped AlxGa1-xAs/GaAs double quantum well system at T≠0. We studied the influence of temperature and the doping concentration on the subband energy levels,Fermi energy,and the linear optical absorption coefficient of the intersubband transition. Studies found that the subband energies increase with the increase of the temperature or the doping concentration; the Fermi energy decreases with the increase of the temperature,and increases with the increase of the doping concentration; the total linear optical absorption coefficient for the intersubband transition decreases with the increase of the temperature,and increases with the increase of the doping concentration. Except that the linear optical absorption coefficient increases with the increase of the temperature for the intersubband transitions 3->6 and 4->5,all other significant linear optical absorption coefficients of intersubband transitions decrease with the increase of the temperature; and the linear optical absorption coefficients of all the intersubband transitions increase with the increase of the doping concentration.

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Last Update: 2015-06-30