[1]杨双波.非对称耦合双量子阱中的激子态及结合能[J].南京师范大学学报(自然科学版),2016,39(03):46.[doi:10.3969/j.issn.1001-4616.2016.03.008]
Yang Shuangbo.Exciton State and Its Binding Energy for a CoupledAsymmetric Double Quantum Well System[J].Journal of Nanjing Normal University(Natural Science Edition),2016,39(03):46.[doi:10.3969/j.issn.1001-4616.2016.03.008]
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非对称耦合双量子阱中的激子态及结合能()
《南京师范大学学报》(自然科学版)[ISSN:1001-4616/CN:32-1239/N]
- 卷:
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第39卷
- 期数:
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2016年03期
- 页码:
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46
- 栏目:
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·物理学·
- 出版日期:
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2016-09-30
文章信息/Info
- Title:
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Exciton State and Its Binding Energy for a CoupledAsymmetric Double Quantum Well System
- 文章编号:
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1001-4616(2016)03-0046-08
- 作者:
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杨双波
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南京师范大学物理科学与技术学院,江苏省大规摸复杂系统数值模拟省重点实验室,江苏 南京 210023
- Author(s):
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Yang Shuangbo
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Jiangsu Key Laboratory for NSLSCS,School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China
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- 关键词:
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量子阱; 激子结合能; 有效质量近似; 重/轻空穴
- Keywords:
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quantum well; binding energy of exciton; effective mass approximation; heavy/light hole
- 分类号:
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O413.1
- DOI:
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10.3969/j.issn.1001-4616.2016.03.008
- 文献标志码:
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A
- 摘要:
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本文在有效质量近似下,利用变分法计算了AlxGa1-xAs/GaAs/AlxGa1-xAs/GaAs/AlxGa1-xAs非对称耦合双量子阱系统中重/轻空穴激子态的结合能,研究了重/轻空穴激子态的结合能随右阱宽的变化关系;计算了在重/轻空穴激子态下电子与重/轻空穴沿z方向的平均距离及在垂直于z轴的平面内的平均距离,研究了它们随右阱宽的变化关系;计算了给定激子态下电子与重/轻空穴在空间各区域的分布几率,研究了空间各区域分布几率随右阱宽变化的关系. 计算中考虑了电子与重/轻空穴在势阱与势垒中具有不同的有效质量,计算结果合理,令人信服.
- Abstract:
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Within effective mass approximation,and by variational method we calculated the binding energies for the heavy hole exciton and light hole exciton for a coupled asymmetric double quantum well system,we studied how the binding energies change with the increase of the width of the right potential well;at a given exciton state,we calculated the expectation value of the distance in z direction and the distance in the plane perpendicular to z axis between electron and the hole(H/L);we studied the behavior of the change of the distances as we increase the width of the right potential well;at a given exciton state,we calculated the probability distribution in space region for the electron and hole(H/L)pair appeared,we studied how the probability changes with increasing the width of the right potential well. The results are reasonable and very convincing.
参考文献/References:
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备注/Memo
- 备注/Memo:
-
收稿日期:2015-10-19.
通讯联系人:杨双波,博士,教授,研究方向:低维量子系统. E-mail:yangshuangbo@njnu.edu.cn
更新日期/Last Update:
2016-09-30