[1]杨双波,赵恒飞.掺杂浓度和温度对δ掺杂的AlxGa1-xAs/GaAs双量子阱系统电子态结构和子带间光学吸收系数的影响[J].南京师大学报(自然科学版),2015,38(02):23.
　Yang Shuangbo,Zhao Hengfei.Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped AlxGa1-xAs/GaAs Double Quantum Well[J].Journal of Nanjing Normal University(Natural Science Edition),2015,38(02):23.
点击复制

掺杂浓度和温度对δ掺杂的AlxGa1-xAs/GaAs双量子阱系统电子态结构和子带间光学吸收系数的影响()
分享到：

《南京师大学报》（自然科学版）[ISSN:1001-4616/CN:32-1239/N]

卷:
第38卷
期数:
2015年02期
页码:
23
栏目:
物理学
出版日期:
2015-06-30

文章信息/Info

Title:
Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped AlxGa1-xAs/GaAs Double Quantum Well
作者:
杨双波; 赵恒飞
“大规模复杂系统数值模拟”江苏省重点实验室,南京师范大学物理科学与技术学院,江苏 南京 210023
Author(s):
Yang Shuangbo; Zhao Hengfei
Jiangsu Key Laboratory for NSLSCS,School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China
关键词:
AlxGa1-xAs/GaAs双量子阱; 掺杂浓度; 子带间线性光学吸收系数
Keywords:
AlxGa1-xAs/GaAs double quantum well; doping concentration; intersubband optical absorption coefficient
分类号:
O413.1
文献标志码:
A
摘要:
在有效质量近似下,通过自洽求解薛定谔方程和泊松方程,计算了在温度不为零时δ掺杂的AlxGa1-xAs/GaAs双量子阱系统的电子态结构. 研究了温度和掺杂浓度对双量子阱系统子带能级、费米能量、及子带间线性光学吸收系数的影响. 研究发现,系统的本征能量随温度升高或随掺杂浓度的增大而增加; 费米能量随温度升高而减小,随掺杂浓度的增大而增加; 子带间总的吸收系数随温度的升高而减小,随掺杂浓度的增大而增加. 除子带间跃迁3->6,4->5随温度升高线性光学吸收系数增加外,其他各主要子带间跃迁随温度升高线性光学吸收系数而减小; 各子带间线性光学吸收系数随掺杂浓度的增大而增加.
Abstract:
By solving Schrödinger equation and Poisson equation self-consistently under the effective mass approximation,we calculated the structure of the electronic state of δ-doped AlxGa1-xAs/GaAs double quantum well system at T≠0. We studied the influence of temperature and the doping concentration on the subband energy levels,Fermi energy,and the linear optical absorption coefficient of the intersubband transition. Studies found that the subband energies increase with the increase of the temperature or the doping concentration; the Fermi energy decreases with the increase of the temperature,and increases with the increase of the doping concentration; the total linear optical absorption coefficient for the intersubband transition decreases with the increase of the temperature,and increases with the increase of the doping concentration. Except that the linear optical absorption coefficient increases with the increase of the temperature for the intersubband transitions 3->6 and 4->5,all other significant linear optical absorption coefficients of intersubband transitions decrease with the increase of the temperature; and the linear optical absorption coefficients of all the intersubband transitions increase with the increase of the doping concentration.

参考文献/References:

[1] Chang C Y,Lin W,Hsu W C,et al. The δ doped In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transitor structures prepared by low-pressure metal organic chemical vapor deposition[J]. Jpn J Appl Phys,1991,30(6):1 158-1 163.
[2]Döhler G H,Künzel H,Olego D,et al. Observation of tunable band gap and two-demensional subbands in a novel GaAs superlattice[J]. Phys Rev Lett,1981,47(12):864-867.
[3]Hai G Q,Studart N,Peeters F M. Electron mobility in two coupled δ layers[J]. Phys Rev:B,1995,52(15):11 273-11 276.
[4]Schubert E F,Ullrich B,Harris T D,et al. Quantum-confined interband absorption in GaAs saw tooth-doping superlattice[J]. Phys Rev:B,1988,38(12):8 305-8 308.
[5]Chadi D J,Chang K J. Theory of atomic and electronic structure of DX in GaAs and AlxGa1-xAs Alloy[J]. Phys Rev Lett,1988,61(7):873-876.
[6]肖细凤,康俊勇. AlGaAs:Sn中俘获势垒的精细结构[J]. 物理学报,2002,51(1):138-142.
[7]Chemla D S,Miller D A B,Smith P W,et al. Room temperature excitonic nonlinear absorption and reflection in GaAs/AlGaAs multiple quantum well structures[J]. IEEE Quantum Electronics,1984,20(3):265-275.
[8]Li E H. Optical properties of an InGaAs-InP interdiffused quantum well[J]. IEEE Quantum Electronics,1998,34(7):1 155-1 161.
[9]李文兵,赵国忠,王福合,等. 半导体超晶格子带间跃迁光吸收理论研究[J]. 光子学报,2006,35(1):61-64.
[10]舒强,舒永春,张冠杰,等. 调制掺杂GaAs/AlGaAs 2DEG材料持久光电导及子带电子特性研究[J]. 物理学报,2006,55(3):1 379-1 383.
[11]杨悦非,朱蔚雯,王渭源. GaAs/AlGaAs量子阱中电子浓度的自洽计算[J]. 半导体学报,1989,10(5):350-355.
[12]Kane M J,Emeny M T,Apsley N,et al. Intersubband absorption in GaAS/AlGaAs single quantum well[J]. Semiconductor Science and Technology,1998,3(7):722-725.
[13]Yesilgul U. Linear and nonlinear intersubband optical absorption coefficients and refractive index changes in symmetric double semi-V-shaped quantum wells[J]. J Luminescence,2012,132(3):765-773.
[14]王杏华,郑厚植,李承芳,等. GaAs/AlGaAs双量子阱中量子相干性研究[J]. 半导体学报,1994,15(10):711-714.
[15]Kim K T,Lee S S,Chuang S L. Inter-miniband optical absorption in a modulation-doped AlxGa1-xAs/GaA ssuperlattice[J]. J Appl Phys,1991,69(9):6 617-6 624.
[16]梁霞霞,李冀光,董晨钟. 一维双势阱问题的理论研究[J]. 原子与分子物理学报,2008,25(5):1 039-1 044.
[17]朱涛,刘克家. 一维对称双势阱的精确解[J]. 贵州工业大学学报:自然科学版,2003(2):1-4.
[18]曾安,吴荣汉,曾一平,等. GaAs/AlGaAs多量子阱激子吸收谱[J]. 半导体学报,1989,10(11):881-883.
[19]Roan E J,Chuang S L. Linear and nonlinear intersubband electro—absorptions in a modulation-doped quantum well[J]. J Appl Phys,1991,69(4):3 249-3 260.
[20]Sahu T,Palo S,Panda,A K. Enhancement of multisubband electron mobility in parabolic AlxGa1-xAs/GaAs double quantum wells[J]. J Appl Phys,2013,113(8):083704-1-9.
[21]Lei S Y,Shen B,Zhang G Y. Influence of width of left well on intersubband transitions in AlxGa1-xN/GaN double quantum wells[J]. Chin Phys Lett,2008,25(9):3 385-3 388.
[22]Lee H J,Juravel L Y,Woolley J C. Electron transport and band structure of AlxGa1-xAs/GaAs alloy[J]. Phys Rev:B,1980,21(2):659-669.
[23]Ronald L G,Krishan K B,Dwight E P. Energy levels of wannier excitons in AlxGa1-xAs/GaAs quantum well structures[J]. Phys Rev:B,1984,29(4):1 807-1 812.
[24]杨双波. 掺杂浓度及掺杂层厚度对Si均匀掺杂的GaAs量子阱中电子态结构的影响[J]. 物理学报,2013,62(15):157 301-157 307.
[25]杨双波. 温度与外磁场对Si均匀掺杂的GaAs量子阱电子态结构的影响[J]. 物理学报,2014,63(5):057 301-057 307.

相似文献/References:

[1]赵恒飞,杨双波.温度和掺杂浓度对delta掺杂GaAs量子阱电子态结构和子带间光学吸收的影响[J].南京师大学报(自然科学版),2014,37(04):51.
　Zhao Hengfei,Yang Shuangbo.Effect of Temperature and Doping Concentration on Structureof Electronic State and Intersubband Optical Absorptionof Si Delta-Doped GaAs Quantum Well[J].Journal of Nanjing Normal University(Natural Science Edition),2014,37(02):51.

备注/Memo

备注/Memo:
收稿日期:2014-09-15.
通讯联系人:杨双波,博士,教授,研究方向:低维半导体量子系统. E-mail:yangshuangbo@njnu. edu. Cn
更新日期/Last Update: 2015-06-30