参考文献/References:
[1] Chang C Y,Lin W,Hsu W C,et al.The δ-doped in 0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition[J].Jpn J Appl Phys,30:1 158-1 163.
[2]D?hler G H,Künzel H,Olego D,et al.Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice[J].Physical Review Letters,1981,47(12):864-867.
[3]Hai G Q,Studart N,Peeters F M.Electron mobility in two coupled delta layers[J].Physical Review B,1995,52:11 273-11 276.
[4]Schubert E F,Ullrich B,Harris T D,et al.Quantum-confined interband absorption in GaAs sawtooth-doping superlattices[J].Physical Review B,1988,38(12):8 305-8 308.
[5]Gaggero-Sager L M,Naumis G G,Mu(~overn)oz-Hernandez M A,et al.Self-consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature[J].Physica B:Condensed Matter,2010,405(20):4 267-4 270.
[6]Ahn D.Intersubband transitions in a δ-doped semiconductor with an applied electric field:exact solutions[J].Physical Review B,1993,48(11):7 981-7 985.
[7]Ozturk E,Sokmen I.The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer[J].Solid State Communications,2003,126(11):605-609.
[8]Ahn D,Chuang S L.Intersubband optical absorption in a quantum well with an applied electric field[J].Physical Review B,1987,35(8):4 149-4 151.
[9]Ahn D,Chuang S.Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field[J].IEEE Journal of Quantum Electronics,1987,23(12):2 196-2 204.
[10]Kasapoglu E,Sari H,S?kmen I.Intersubband optical absorption in a quantum well under a tilted magnetic field[J].Superlattices and Microstructures,2001,29(1):25-32.
[11]Ozturk E.Optical intersubband transitions in double Si δ-doped GaAs under an applied magnetic field[J].Superlattices and Microstructures,2009,46(5):752-759.
[12]Ozturk E,Sari H,Ergun Y,et al.The effect of the donor distribution on the electronic structure of two coupled Si δ-doped layers in GaAs[J].Physica B:Condensed Matter,2003,334(1):1-8.
[13]王恩哥,黄和鸾.掺杂超晶格——Si-nipi结构中的电子态[J].半导体学报,1985,6(4):446-450.
[14]舒强,舒永春,张冠杰,等.调制掺杂GaAs/AlGaAs 2DEG材料持久光电导及子带电子特性研究[J].物理学报,2006,55(3):1 379-1 383.
[15]Kim K T,Lee S S,Chuang S L.Inter-miniband optical absorption in a modulation-doped AlxGa1-xAs/GaAs superlattice[J].Journal of Applied Physics,1991,69(9):6 617-6 624.
[16]Ozturk E,Sokmen I.Intersubband transitions for single,double and triple Si δ-doped GaAs layers[J].Journal of Physics D:Applied Physics,2003,36(20):2 457-2 464.
[17]Ozturk E,Sokmen I.Intersubband optical absorption of double Si δ-doped GaAs layers[J].Superlattices and Microstructures,2004,35(1):95-104.
[18]杨双波.掺杂浓度及掺杂层厚度对Si均匀掺杂的GaAs量子阱中电子态结构的影响[J].物理学报,2013,62(15):157 301(1-7).
[19]余瑞兰,蔺玉柱,崔光磊.用Numerov算法求解一维无限深势阱的本征问题[J].巢湖学院学报,2003,3:43-47.